Intrinsic electron mobility limits inβ-Ga2O3
نویسندگان
چکیده
منابع مشابه
Intrinsic electron mobility limits in b-Ga2O3
By systematically comparing experimental and theoretical transport properties, we identify the polar optical phonon scattering as the dominant mechanism limiting electron mobility in b–Ga2O3 to <200 cm/V s at 300 K for donor doping densities lower than !10 cm. Despite similar electron effective mass of b–Ga2O3 to GaN, the electron mobility is !10" lower because of a massive Fr€ohlich interactio...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2016
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4968550